DocumentCode
3464467
Title
Ultimate top-down etching processes for future nanoscale devices
Author
Samukawa, Seiji ; Endo, Kazuhiro
Author_Institution
Inst. of Fluid Sci., Tohoku Univ., Sendai
fYear
2006
fDate
23-26 Oct. 2006
Firstpage
462
Lastpage
465
Abstract
Our newly developed neutral beam (NB) etching could firstly accomplish the damage-free (defect-free and smooth surface) fabrication of high aspect rectangular Si-Fins. The fabricated FinFETs realize higher device performance (higher electron mobility) than that using a conventional reactive ion etching. The improved mobility is well explained by the atomically flatness of the neutral beam etched surfaces. Our new results strongly support the effectiveness of the NB technology for the nano-scale CMOS fabrication
Keywords
MOSFET; etching; nanotechnology; FinFET; damage-free fabrication; higher electron mobility; nano-scale CMOS fabrication; nanoscale devices; neutral beam etching; top-down etching processes; CMOS technology; Electrodes; Etching; Fabrication; FinFETs; Nanoscale devices; Oxidation; Plasma applications; Plasma chemistry; Plasma immersion ion implantation;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306301
Filename
4098136
Link To Document