DocumentCode
3464508
Title
Electrical properties study of Ni (Pt)-silicide/Si contacts
Author
Huang, Yifei ; Jiang, Yu-Long ; Ru, Guo-Ping ; Lu, Fang ; Cai, Qijia ; Cao, Shihai ; Li, Bing-Zong
Author_Institution
Sch. of Microelectron., Fudan Univ., Shanghai
fYear
2006
fDate
Oct. 2006
Firstpage
475
Lastpage
477
Abstract
The electrical properties of Ni (Pt)-silicide/Si contact is studied and it is revealed that the Schottky barrier contact obeys a complicated two Gauss distribution. It is demonstrated that the Pt interface layer can not only improve NiSi phase thermal stability but also improve contact homogeneity
Keywords
Gaussian distribution; Schottky barriers; nickel compounds; ohmic contacts; silicon; thermal stability; Gauss distribution; NiPt-Si; Schottky barrier contact; electrical properties; improved contact homogeneity; interface layer; thermal stability; Contacts; Gaussian distribution; Schottky barriers; Silicides; Silicon; Substrates; Temperature dependence; Temperature distribution; Thermal stability; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306305
Filename
4098140
Link To Document