Title :
CMOS shallow trench isolation x-stress effect on channel width for 130nm technology
Author :
Tan, Philip Beow Yew ; Kordesch, Albert Victor ; Sidek, Othman
Author_Institution :
Silterra Malaysia Sdn. Bhd., Kulim
Abstract :
In this paper, we investigated the compressive mechanical STI x-stress (in the direction of channel length) on channel width. When the channel width becomes narrower, the compressive STI y-stress effect become more severe and causes STI x-stress has lower effect on NMOS Idsat but has higher effect on PMOS Idsat. This means that the amount of NMOS Idsat decrement due to x-stress become less but the amount of PMOS Idsat increment due to x-stress become higher when y-stress increases (narrower channel width)
Keywords :
CMOS integrated circuits; isolation technology; nanotechnology; stress effects; 130 nm; CMOS shallow trench isolation; channel width; compressive STI y-stress effect; compressive mechanical STI x-stress effect; CMOS technology; Charge carrier processes; Compressive stress; Electron mobility; Isolation technology; MOSFETs; Semiconductor device modeling; Semiconductor process modeling; Silicon on insulator technology; Thermal stresses;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306306
