The impact of forming temperature on material and electrical characteristics of nickel silicide gate electrode

Author

Shan, Xiaonan ; Cai, Yimao ; Xu, Chuan ; Li, Yan ; Huang, Ru

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing

fYear

2006

fDate

Oct. 2006

Firstpage

481

Lastpage

483

Abstract

In this letter, the material and electrical characteristics of the nickel silicide (NiSi) formed at various RTA temperatures as gate electrode has been studied. By comparing various samples formed at 400 degC, 450 degC, 500 degC, and 600 degC with Vfb-EOT curves, work function and fixed charge, we found that when the RTA temperature is higher than 500 degC the interaction between the NiSi and SiO₂ damage the gate dielectric (silicon dioxide) and change the effective work function of the NiSi (from 400 degC 4.47eV to 600 degC 4.64eV) by defects which is result of Ni-Si bonds. And the work function of NiSi is 4.47 plusmn 0.02 eV (formed at 400 degC, 450degC and 500degC). Finally we compared the reliability of the NiSi gate capacitor formed at 400 degC 450 degC and 500 degC, and get the conclusion that NiSi formed at 400 degC and 450 degC is stable on the silicon oxide

Keywords

MOS capacitors; dielectric materials; nickel compounds; rapid thermal annealing; semiconductor device reliability; silicon compounds; work function; 400 to 600 C; NiSi-SiO₂-Si; RTA temperatures; capacitor reliability; effective work function; electrical characteristics; forming temperature impact; gate dielectric; gate electrode; material characteristics; Annealing; CMOS technology; Capacitance-voltage characteristics; Capacitors; Channel bank filters; Electric variables; Electrodes; Nickel; Silicides; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306307

Filename

4098142