DocumentCode :
3464566
Title :
Study on the lapping slurry for ULSI silicon substrate preparation
Author :
Zhou, Jian-Wei ; Niu, Xin-huan ; Shi, Qiao-shuo ; Liu, Yu-ling
Author_Institution :
Inst. of Microelectron., Hebei Univ. of Technol., Tianjin
fYear :
2006
fDate :
23-26 Oct. 2006
Firstpage :
487
Lastpage :
488
Abstract :
Lapping is one of the basic procedures in silicon device substrate preparation. There exist excess stress, serious surface scratch, damage and pollution of ion in the procedure of lapping process, so it is necessary to improve the mechanism of lapping through changing the single mechanical action to equilibrium chemical and mechanical action. Under the condition of chemical mechanical action, small damage and low stress on silicon wafers can be gained, which can decrease the breakage and stress accumulation. Then the product quality and machining efficiency can be improved. In this study, the lapping slurry mechanism of action was introduced, and the operation significance and development status were analyzed. Through improving the original lapping slurry, the dispersibility and floatability of lapping slurry was improved. The component, action and mechanism of lapping slurry were also introduced
Keywords :
ULSI; chemical mechanical polishing; lapping (machining); planarisation; silicon; slurries; substrates; ULSI; chemical mechanical action; imporved dispersibility; improved floatability; improved machining efficiency; improved product quality; lapping process; lapping slurry mechanism; substrate preparation; Abrasives; Chemical analysis; Lapping; Rough surfaces; Silicon; Slurries; Solids; Stress; Surface roughness; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
Type :
conf
DOI :
10.1109/ICSICT.2006.306309
Filename :
4098144
Link To Document :
بازگشت