DocumentCode
3464566
Title
Study on the lapping slurry for ULSI silicon substrate preparation
Author
Zhou, Jian-Wei ; Niu, Xin-huan ; Shi, Qiao-shuo ; Liu, Yu-ling
Author_Institution
Inst. of Microelectron., Hebei Univ. of Technol., Tianjin
fYear
2006
fDate
23-26 Oct. 2006
Firstpage
487
Lastpage
488
Abstract
Lapping is one of the basic procedures in silicon device substrate preparation. There exist excess stress, serious surface scratch, damage and pollution of ion in the procedure of lapping process, so it is necessary to improve the mechanism of lapping through changing the single mechanical action to equilibrium chemical and mechanical action. Under the condition of chemical mechanical action, small damage and low stress on silicon wafers can be gained, which can decrease the breakage and stress accumulation. Then the product quality and machining efficiency can be improved. In this study, the lapping slurry mechanism of action was introduced, and the operation significance and development status were analyzed. Through improving the original lapping slurry, the dispersibility and floatability of lapping slurry was improved. The component, action and mechanism of lapping slurry were also introduced
Keywords
ULSI; chemical mechanical polishing; lapping (machining); planarisation; silicon; slurries; substrates; ULSI; chemical mechanical action; imporved dispersibility; improved floatability; improved machining efficiency; improved product quality; lapping process; lapping slurry mechanism; substrate preparation; Abrasives; Chemical analysis; Lapping; Rough surfaces; Silicon; Slurries; Solids; Stress; Surface roughness; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306309
Filename
4098144
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