Title :
Measurement of Nano-Displacement Based on In-Plane Suspended-Gate MOSFET Detection Compatible with a Front-End CMOS Process
Author :
Colinet, E. ; Durand, C. ; Audebert, P. ; Renaux, P. ; Mercier, D. ; Duraffourg, L. ; Ollier, E. ; Casset, F. ; Ancey, P. ; Buchaillot, L. ; Ionescu, A.M.
Author_Institution :
CEA-LETI, Grenoble
Abstract :
The first front-end CMOS co-integration based on the lateral SGMOSFET presented in this paper demonstrates the benefit of a co-integration approach for NEMS devices. Performance using this device is compared to that obtained with a standalone ASIC. The next step will consist of replacing equivalently the input transistor of the ASIC cascode structure by the SGMOSFET.
Keywords :
CMOS integrated circuits; MOSFET; displacement measurement; nanoelectronics; ASIC cascode structure; NEMS devices; front-end CMOS co-integration; in-plane suspended-gate MOSFET detection; lateral SGMOSFET; nanodisplacement measurement; standalone ASIC comparison; Application specific integrated circuits; Bandwidth; CMOS process; CMOS technology; Capacitance measurement; MOSFET circuits; Micromechanical devices; Nanoelectromechanical systems; Noise measurement; Silicon;
Conference_Titel :
Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2010-0
Electronic_ISBN :
978-1-4244-2011-7
DOI :
10.1109/ISSCC.2008.4523192
