• DocumentCode
    3464604
  • Title

    The particle-size-controllable growth of silica sol abrasive for chemical mechanical polishing

  • Author

    Gao, Peng ; Liu, Yuling ; Yao, Suying ; Zhang, Jianxin

  • Author_Institution
    Sch. of Electron. & Inf. Eng., Tianjin Univ.
  • fYear
    2006
  • fDate
    23-26 Oct. 2006
  • Firstpage
    492
  • Lastpage
    494
  • Abstract
    In the further development of chemical mechanical polishing (CMP) process, it needs badly to have a sort of low polydispersion index (PDI) and high purity silica sol nanometer abrasives which can be stable for a long time. In this paper, through a large number of experiments, we have proposed the optimization process schemes and pyramid shape grow mode in preparing large particle size silica sol, realizing particle size controllable to grow, producing the silica sol of different specifications: 10 ~ 15nm, 20 ~ 25 nm, 30 ~ 40nm, 50 ~ 60nm, 80 ~ 90nm, 110 ~ 130nm, etc, among, the silica sol with large particle size has a low viscidity (1.431mpa middot s), low polydispersion index (1.002), high mechanical intension, satisfying for the need of mechanical polishing of CMP
  • Keywords
    abrasives; chemical mechanical polishing; nanoparticles; particle size; silicon compounds; sols; SiO2; chemical mechanical polishing; nanometer abrasives; optimization process schemes; particle size controllable growth; pyramid shape grow mode; silica sol abrasive; Abrasives; Chemical engineering; Chemical processes; Chemical technology; Microelectronics; Planarization; Resins; Shape control; Silicon compounds; Slurries;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0160-7
  • Electronic_ISBN
    1-4244-0161-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.2006.306311
  • Filename
    4098146