DocumentCode
3464604
Title
The particle-size-controllable growth of silica sol abrasive for chemical mechanical polishing
Author
Gao, Peng ; Liu, Yuling ; Yao, Suying ; Zhang, Jianxin
Author_Institution
Sch. of Electron. & Inf. Eng., Tianjin Univ.
fYear
2006
fDate
23-26 Oct. 2006
Firstpage
492
Lastpage
494
Abstract
In the further development of chemical mechanical polishing (CMP) process, it needs badly to have a sort of low polydispersion index (PDI) and high purity silica sol nanometer abrasives which can be stable for a long time. In this paper, through a large number of experiments, we have proposed the optimization process schemes and pyramid shape grow mode in preparing large particle size silica sol, realizing particle size controllable to grow, producing the silica sol of different specifications: 10 ~ 15nm, 20 ~ 25 nm, 30 ~ 40nm, 50 ~ 60nm, 80 ~ 90nm, 110 ~ 130nm, etc, among, the silica sol with large particle size has a low viscidity (1.431mpa middot s), low polydispersion index (1.002), high mechanical intension, satisfying for the need of mechanical polishing of CMP
Keywords
abrasives; chemical mechanical polishing; nanoparticles; particle size; silicon compounds; sols; SiO2; chemical mechanical polishing; nanometer abrasives; optimization process schemes; particle size controllable growth; pyramid shape grow mode; silica sol abrasive; Abrasives; Chemical engineering; Chemical processes; Chemical technology; Microelectronics; Planarization; Resins; Shape control; Silicon compounds; Slurries;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306311
Filename
4098146
Link To Document