DocumentCode
3464630
Title
Design and fabrication of a low crosstalk SiO/sub 2//Si array waveguide gratings
Author
Li, Wei ; Ma, Weidong
Author_Institution
Inst. of Optoelectron. Sci. & Technol., Huazhong Univ. of Sci. & Technol., Wuhan
fYear
2006
fDate
23-26 Oct. 2006
Firstpage
498
Lastpage
500
Abstract
The origin of random phase errors form the crosstalk induced by the corresponding fabrication processing parameters´ based on silicon in AWG (array waveguide grating) is analyzed by considering waveguide structure and refractive index distribution uniformity. Several analytical formulas for crosstalk level estimation are given. With them a 40 channel AWG de-multiplexer is designed and fabricated. The experiment shows that the crosstalk level between non-adjacent channels is as low as -45dB, with the random change in waveguide geometric structure in silicon substrate is less than 0.5 mum, the average refractive index deviation of core layer and cladding layer is less than 2 times 10-4 and 6 times 10-4
Keywords
demultiplexing equipment; integrated optoelectronics; optical crosstalk; refractive index; silicon; silicon compounds; AWG demultiplexer; SiO2-Si; array waveguide gratings; crosstalk level estimation; fabrication processing parameters; random phase errors; refractive index distribution uniformity; waveguide structure; Arrayed waveguide gratings; Crosstalk; Degradation; Equations; Optical device fabrication; Phased arrays; Refractive index; Silicon; Waveguide components; Waveguide theory;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306335
Filename
4098148
Link To Document