• DocumentCode
    3464669
  • Title

    A new PVD sputtering source for metal gate application

  • Author

    Ding, Peijun ; Liu, Dave ; Ye, Mengqi ; Rengarajan, Suraj ; Fu, Jianming ; Xu, Zheng

  • Author_Institution
    Thin Films Group, Appl. Mater. Inc., Santa Clara, CA
  • fYear
    2006
  • fDate
    23-26 Oct. 2006
  • Firstpage
    509
  • Lastpage
    512
  • Abstract
    A new PVD source for metal gate applications has been systematically characterized. Results from the study indicate that the new source provides very low trap density (<1 times 1011/cm2 eV), excellent film thickness (and sheet resistance) non-uniformity (<1% 1sigma) and a wide range in deposition rates (from 0.4 Aring/s to 6 Aring/s), making it suitable for depositing metal films directly on gate oxides in 45nm and 32nm technology nodes
  • Keywords
    metals; sputter deposition; 32 nm; 45 nm; PVD sputtering source; metal films deposition; metal gate application; Atherosclerosis; Electrons; Inorganic materials; Magnetic confinement; Magnetic flux; Plasma applications; Plasma density; Plasma sources; Sputtering; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0160-7
  • Electronic_ISBN
    1-4244-0161-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.2006.306338
  • Filename
    4098151
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3464669