Title :
A new PVD sputtering source for metal gate application
Author :
Ding, Peijun ; Liu, Dave ; Ye, Mengqi ; Rengarajan, Suraj ; Fu, Jianming ; Xu, Zheng
Author_Institution :
Thin Films Group, Appl. Mater. Inc., Santa Clara, CA
Abstract :
A new PVD source for metal gate applications has been systematically characterized. Results from the study indicate that the new source provides very low trap density (<1 times 1011/cm2 eV), excellent film thickness (and sheet resistance) non-uniformity (<1% 1sigma) and a wide range in deposition rates (from 0.4 Aring/s to 6 Aring/s), making it suitable for depositing metal films directly on gate oxides in 45nm and 32nm technology nodes
Keywords :
metals; sputter deposition; 32 nm; 45 nm; PVD sputtering source; metal films deposition; metal gate application; Atherosclerosis; Electrons; Inorganic materials; Magnetic confinement; Magnetic flux; Plasma applications; Plasma density; Plasma sources; Sputtering; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306338
