• DocumentCode
    3464799
  • Title

    A mode-matching 130-kHz ring-coupled gyroscope with 225 ppm initial driving/sensing mode frequency splitting

  • Author

    Jye Ren ; Chun-You Liu ; Ming-Huang Li ; Cheng-Chi Chen ; Chao-Yu Chen ; Cheng-Syun Li ; Sheng-Shian Li

  • Author_Institution
    Inst. of NanoEngineering & Microsyst., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • fYear
    2015
  • fDate
    21-25 June 2015
  • Firstpage
    1057
  • Lastpage
    1060
  • Abstract
    A degenerate mode 130-kHz ring-coupled gyroscope with auxiliary transducer array is designed to enhance the sensitivity as well as the mode-matching feature. The proof-of-concept device with 3 μm transducer´s gap is fabricated using a conventional (100) silicon-on-insulator (SOI) wafer process with only two lithography steps. The auxiliary parallel-plate transducer array is located at the maximum displacement of the vibrating ring to enhance the electromechanical coupling while reducing the sensing noise. The in-plane trefoil mode (n=3) is adopted to alleviate the initial frequency splitting in (100) crystalline silicon device layer. The average frequency split for the drive/sense modes over multiple tested devices is only 225 ppm with the mean resonance frequency of 130 kHz. The measured Q-factor is 50 in atmospheric pressure and up to 10,000 in vacuum. Owing to the larger transduction area benefitting from the transducer array design, a low dc-bias voltage (VP) of 3 V in vacuum (21 V in air) is sufficient to sustain the driving loop oscillation. As integrated with the sensing circuits to operate the proposed gyroscope, a scale factor of 2.2 mV/°/s and resolution of 0.26 °/s, respectively, are characterized in atmospheric pressure.
  • Keywords
    Q-factor measurement; elemental semiconductors; frequency measurement; gyroscopes; lithography; sensor arrays; silicon; silicon-on-insulator; transducers; vibration measurement; Q-factor measurement; SOI wafer process; Si; atmospheric pressure; auxiliary parallel-plate transducer array; average frequency split measurement; crystalline silicon device layer; distance 3 mum; electromechanical coupling; frequency 130 kHz; in-plane trefoil mode; initial driving-sensing mode frequency splitting; lithography; mode-matching ring-coupled gyroscope; silicon-on-insulator wafer process; voltage 21 V; voltage 3 V; Fabrication; Gyroscopes; Micromechanical devices; Resonant frequency; Sensors; Silicon; Transducers; Gyroscope; MEMS; mode-matching; ring-coupled; transducer array;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2015 Transducers - 2015 18th International Conference on
  • Conference_Location
    Anchorage, AK
  • Type

    conf

  • DOI
    10.1109/TRANSDUCERS.2015.7181108
  • Filename
    7181108