Title :
A dielectric-bridge-type MEMS series contact switch for 0-10GHz applications
Author :
Hu, Guang-Wei ; Liu, Ze-Wen ; Hou, Zhi-Hao ; Liu, Li-Tian ; Li, Zhi-Jian
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing
Abstract :
A dielectric-bridge-type MEMS series contact switch is designed, fabricated and tested. This structure allows electrically insulating the control circuit from the RF signal path, and avoids the possible crosstalk. SiON is used as the function dielectric material for its low intrinsic stress. Both the upper gold electrodes and the contact metallic bar are on the rear side surface of the SiON dielectric bridge membrane. The fabrication process is relatively simple and the switch can be easily realized in common CMOS process with minimum modification. The measured results show the pull-in voltage is 23.3V and the isolation is better than -53dB at 0-10GHz
Keywords :
CMOS integrated circuits; crosstalk; dielectric materials; microswitches; microwave switches; 0 to 10 GHz; 23 V; CMOS process; SiON; contact metallic bar; control circuit; crosstalk; dielectric bridge membrane; dielectric material; dielectric-bridge-type MEMS series contact switch; gold electrodes; intrinsic stress; Circuit testing; Contacts; Crosstalk; Dielectric materials; Dielectrics and electrical insulation; Electrodes; Gold; Micromechanical devices; Stress; Switches;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306347
