FinFET current mirror design and evaluation

Author

Marshall, Andrew ; Kulkarni, Mak ; Campise, Mark ; Cleavelin, Rinn ; Duvvury, Charvaka ; Gossner, Harald ; Gostkowski, Michael ; Knoblinger, Gerhard ; Pacha, Christian ; Russ, Christian ; Schruefer, Klaus ; Schulz, Thomas ; VonArnim, Klaus ; Wilks, Bruce

Author_Institution

Texas Instruments Inc., Dallas, TX, USA

fYear

2005

fDate

10 Oct. 2005

Firstpage

187

Lastpage

190

Abstract

With trends toward smaller geometries and improved circuit performance continuing, an option being investigated is multigate FETs on SOI substrates. SOI lends itself to SOC systems due to its inherently lower noise and ease of integration of analog, digital, RF and power circuits. A critical analog circuit requirement is accurate current mirroring. Here characteristics of fully depleted FinFET current mirrors are presented. Silicon FinFET current mirrors and their bulk planar counterparts have similar performance and matching: a vital requirement for analog circuitry on this type of material.

Keywords

MOSFET circuits; current mirrors; network synthesis; silicon; silicon-on-insulator; FinFET current mirrors; SOC systems; SOI substrates; Si; multigate FET; system-on-chip; Circuit optimization; Double-gate FETs; FinFETs; Geometry; Instruments; MOS devices; Mirrors; Silicon; System-on-a-chip; Visualization;

fLanguage

English

Publisher

ieee

Conference_Titel

Architecture, Circuits and Implementtation of SOCs, 2005. DCAS '05. Proceedings of the 2005 IEEE Dallas/CAS Workshop:

Print_ISBN

0-7803-9515-8

Type

conf

DOI

10.1109/DCAS.2005.1611167

Filename

1611167