Title :
Fabrication of poly crystalline 3C-SiC resonator
Author :
Jin, Ning ; Guosheng, Sun ; Quancheng, Gong ; Zhong, Liu
Author_Institution :
Integrated Technol. Center, Semicond. Inst. of CAS, Beijing
Abstract :
This paper presents a new method to fabricate the poly crystalline 3C-SiC resonator using surface micromachining techniques. The devices are fabricated from 2 mum polySiC thin film heteroepitaxially grown on PECVD silicon oxide material. Thermal grown SiO2 is used as isolation layer, PECVD grown SiO2 is used as sacrificial layer and Ni is used as ohmic contact metal in the technology. Finally, the resonator chips with fundamental resonance frequency of 64.5kHz are measured successfully using optical MEMS dynamic testing technique under atmosphere pressure
Keywords :
micromachining; nickel; ohmic contacts; plasma CVD coatings; resonators; semiconductor thin films; silicon compounds; wide band gap semiconductors; 2 micron; 64.5 kHz; Ni; PECVD silicon oxide material; SiC; SiO2; isolation layer; ohmic contact metal; optical MEMS dynamic testing; polySiC thin film; polycrystalline 3C-SiC resonator; sacrificial layer; surface micromachining; Crystalline materials; Crystallization; Fabrication; Isolation technology; Micromachining; Ohmic contacts; Optical resonators; Semiconductor thin films; Silicon; Thin film devices;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306378
