Fabrication of poly crystalline 3C-SiC resonator

Author

Jin, Ning ; Guosheng, Sun ; Quancheng, Gong ; Zhong, Liu

Author_Institution

Integrated Technol. Center, Semicond. Inst. of CAS, Beijing

fYear

2006

fDate

Oct. 2006

Firstpage

572

Lastpage

574

Abstract

This paper presents a new method to fabricate the poly crystalline 3C-SiC resonator using surface micromachining techniques. The devices are fabricated from 2 mum polySiC thin film heteroepitaxially grown on PECVD silicon oxide material. Thermal grown SiO₂ is used as isolation layer, PECVD grown SiO₂ is used as sacrificial layer and Ni is used as ohmic contact metal in the technology. Finally, the resonator chips with fundamental resonance frequency of 64.5kHz are measured successfully using optical MEMS dynamic testing technique under atmosphere pressure

Keywords

micromachining; nickel; ohmic contacts; plasma CVD coatings; resonators; semiconductor thin films; silicon compounds; wide band gap semiconductors; 2 micron; 64.5 kHz; Ni; PECVD silicon oxide material; SiC; SiO₂; isolation layer; ohmic contact metal; optical MEMS dynamic testing; polySiC thin film; polycrystalline 3C-SiC resonator; sacrificial layer; surface micromachining; Crystalline materials; Crystallization; Fabrication; Isolation technology; Micromachining; Ohmic contacts; Optical resonators; Semiconductor thin films; Silicon; Thin film devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306378

Filename

4098170