An analytical model for the output voltage of four-terminal silicon pressure transducers

Author

Daoming, Ke ; Junning, Chen ; Lei, Liu ; Qi, Liu ; Tailong, Xu

Author_Institution

Coll. of Electron. & Technol., Anhui Univ., Hefei

fYear

2006

fDate

Oct. 2006

Firstpage

605

Lastpage

607

Abstract

The paper resolved a two-dimensional partial differential equation of transverse piezoresistive effect transducers with the method of perturbation. Relationship between the output voltage and device size has been gotten. We verified that the maximum output voltage is located at the middle point of output terminal. And then the expression of the maximum output voltage is given. The calculation results are accordant with numerical and experimental values of devices. These expressions based on the paper can be used in designs and simulations of four-terminal piezoresistive pressure transducers

Keywords

partial differential equations; perturbation techniques; piezoresistive devices; pressure transducers; 2D partial differential equation; analytical model; device size; maximum output voltage; perturbation method; piezoresistive pressure transducers; silicon pressure transducers; transverse piezoresistive effect transducers; Analytical models; Educational institutions; Electrodes; Maxwell equations; Partial differential equations; Piezoresistance; Silicon; Stress; Transducers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306389

Filename

4098181