A MEMS IR thermal source for NDIR gas sensors

Author

Ji, Xinming ; Wu, Feidie ; Wang, Jianye ; Jia, Zhou ; Bao, ZongMing ; Huang, Yiping

Author_Institution

State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

620

Lastpage

622

Abstract

A MEMS thermal emitter based on heating thin film resistors has been studied for the MEMS infrared gas sensor as an infrared (IR) source. The IR source, with an effective emitting area of 1.6 times 1.6 mm², is fabricated using heated platinum thin film resistors deposited on a Si₃N₄/Si0₂ membrane. IR radiation power of the emitter is up to 60mW with the effective blackbody temperature ranged from 300 to 850K. Moreover, it has very good dynamic parameters a modulation frequency as high as 100Hz and a response time of 23ms. The properties of the source demonstrate the potential applications to meet the performance, size and low-cost requirements of the mass market

Keywords

emissivity; gas sensors; infrared sources; microsensors; thin film resistors; 23 ms; 300 to 850 K; MEMS IR thermal source; MEMS thermal emitter; NDIR gas sensors; Si₃N₄-SiO₂; electro modulation; infrared gas sensor; infrared source; thin film resistors; Gas detectors; Infrared heating; Infrared sensors; Micromechanical devices; Platinum; Resistors; Semiconductor thin films; Sputtering; Thermal resistance; Thin film sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306394

Filename

4098186