DocumentCode
3465357
Title
A novel uncooled a-Si microbolometer for infrared detection
Author
Liu, Xing-Ming ; Han, Lin ; Liu, Li-Tian
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing
fYear
2006
fDate
23-26 Oct. 2006
Firstpage
626
Lastpage
628
Abstract
A new structure uncooled amorphous silicon (a-Si) microbolometer for infrared detection has been fabricated and characterized. Based on polyimide thermal isolation layer and bottom metal reflective structure, the newly presented bolometer has the advantage of low cost, high yield and high performance. The dependence of the temperature coefficient of resistance on operating temperature has been investigated. The results show that at a chopping frequency of 30Hz and a bias voltage of 5V, the maximum detectivity of 1.7 times 108 cmHzfrac12W-1 is achieved
Keywords
bolometers; infrared detectors; microsensors; silicon; 30 Hz; 5 V; Si; infrared detection; metal reflective structure; operating temperature; polyimide thermal isolation layer; temperature coefficient of resistance; uncooled microbolometer; Bolometers; Costs; Electromagnetic wave absorption; Fabrication; Infrared detectors; Polyimides; Temperature sensors; Thermal conductivity; Thermal resistance; Thermal sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306396
Filename
4098188
Link To Document