DocumentCode
3465453
Title
Analysis of free-carrier charges distribution in the n-GaAs monocrystals used at formation of the high-resistance material for the ionizing radiation sensors
Author
Budnitsky, D.L. ; Koretskaya, O.B. ; Novikov, V.A. ; Tolbanov, O.P.
Author_Institution
Siberian Phys.-Tech. Inst., Tomsk, Russia
fYear
2005
fDate
21-22 Oct. 2005
Firstpage
80
Lastpage
84
Abstract
In the paper, analysis of charge distribution in the gallium arsenide monocrystals are presented. The absorption spectrums are investigated. It is described that non-destroying testing of monocrystals before diffusion is possible.
Keywords
III-V semiconductors; carrier density; chromium; diffusion; gallium arsenide; semiconductor counters; Cr diffusion; GaAs:Cr; absorption spectrum; free-carrier charge distribution; high-resistance material; ionizing radiation sensor; n-GaAs monocrystals; nondestroying testing; Charge carriers; Chromium; Conducting materials; Conductivity; Detectors; Electromagnetic wave absorption; Electrons; Gallium arsenide; Ionizing radiation sensors; Testing; absorbing spectrum; free-carrier charge; gallium arsenide;
fLanguage
English
Publisher
ieee
Conference_Titel
Control and Communications, 2005. SIBCON '05. IEEE International Siberian Conference on
Print_ISBN
0-7803-9219-1
Type
conf
DOI
10.1109/SIBCON.2005.1611197
Filename
1611197
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