Title :
Study of particularities for metal contact formation to the semiconductor high-resistance GaAs:Cr
Author :
Budnitsky, D.L. ; Lychagin, A.D. ; Okaevich, L.S. ; Tolbanov, O.P.
Author_Institution :
Siberian Phys.-Tech. Inst., Tomsk, Russia
Abstract :
In the paper, studies of volt-ampere and volt-luxing characteristics of the detector structures based on gallium arsenide, compensated by chromium are carried out. It is shown that metallic contacts to a structure are barrier for electrons. One of contacts is inject at any bias polarity.
Keywords :
III-V semiconductors; chromium; diffusion; electrical resistivity; gallium arsenide; ohmic contacts; semiconductor counters; GaAs:Cr; bias polarity; detector structure; high resistance GaAs:Cr; metal contact formation; ohmic contact; volt-ampere characteristic; volt-luxing characteristic; Character generation; Charge carrier processes; Chromium; Communication system control; Contact resistance; Electrons; Gallium arsenide; Ionizing radiation; Ohmic contacts; Radiation detectors; gallium arsenide; ohmic contact; the detector structure;
Conference_Titel :
Control and Communications, 2005. SIBCON '05. IEEE International Siberian Conference on
Print_ISBN :
0-7803-9219-1
DOI :
10.1109/SIBCON.2005.1611198
