DocumentCode
3465465
Title
Study of particularities for metal contact formation to the semiconductor high-resistance GaAs:Cr
Author
Budnitsky, D.L. ; Lychagin, A.D. ; Okaevich, L.S. ; Tolbanov, O.P.
Author_Institution
Siberian Phys.-Tech. Inst., Tomsk, Russia
fYear
2005
fDate
21-22 Oct. 2005
Firstpage
85
Lastpage
89
Abstract
In the paper, studies of volt-ampere and volt-luxing characteristics of the detector structures based on gallium arsenide, compensated by chromium are carried out. It is shown that metallic contacts to a structure are barrier for electrons. One of contacts is inject at any bias polarity.
Keywords
III-V semiconductors; chromium; diffusion; electrical resistivity; gallium arsenide; ohmic contacts; semiconductor counters; GaAs:Cr; bias polarity; detector structure; high resistance GaAs:Cr; metal contact formation; ohmic contact; volt-ampere characteristic; volt-luxing characteristic; Character generation; Charge carrier processes; Chromium; Communication system control; Contact resistance; Electrons; Gallium arsenide; Ionizing radiation; Ohmic contacts; Radiation detectors; gallium arsenide; ohmic contact; the detector structure;
fLanguage
English
Publisher
ieee
Conference_Titel
Control and Communications, 2005. SIBCON '05. IEEE International Siberian Conference on
Print_ISBN
0-7803-9219-1
Type
conf
DOI
10.1109/SIBCON.2005.1611198
Filename
1611198
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