New photovoltaic gamma and X-ray detector

Author

Ayzenshtat, G.I. ; Vilisova, M.D. ; Drugova, E.P. ; Mokeev, D.Y. ; Porokhovnichnko, L.P. ; Chubirko, V.A.

Author_Institution

JSC Sci. Res. Inst. of Semicond. Devices, Tomsk, Russia

fYear

2005

fDate

21-22 Oct. 2005

Firstpage

96

Lastpage

99

Abstract

Detectors based on epitaxial gallium arsenide grown from the gas phase are investigated. Two types of structures are studied: 1) with a not doped active layer (n ≤ 10¹³cm^-3), 2) with the active layer compensated by chromium. It is shown that both types of structures operates in photovaultarical mode that allows to remove the drain current. Structures may be used as detectors of gamma radiation. Detectors have 100% efficiency of charge collection.

Keywords

III-V semiconductors; X-ray detection; chromium; gallium arsenide; gamma-ray detection; photodetectors; semiconductor counters; GaAs:Cr; X-ray detector; active layer; chromium; drain current; epitaxial gallium arsenide; gas phase; photovaultarical mode; photovoltaic gamma radiation detector; vapour phase epitaxy; Chromium; Gallium arsenide; Gamma ray detection; Gamma ray detectors; Gamma rays; Phase detection; Photovoltaic systems; Radiation detectors; Solar power generation; X-ray detectors; VPE GaAs; X-Ray; photovoltaic; radiation detector;

fLanguage

English

Publisher

ieee

Conference_Titel

Control and Communications, 2005. SIBCON '05. IEEE International Siberian Conference on

Print_ISBN

0-7803-9219-1

Type

conf

DOI

10.1109/SIBCON.2005.1611200

Filename

1611200