DocumentCode
3465836
Title
Features of the plasma-channel formation during the voltage generator with the 1-MV/ns-voltage-rise-rate discharge to the vacuum axial line containing either closed via microconductor or open-ended gap
Author
Volkov, Nikolay B. ; Barakhvostov, S.V. ; Bochkarev, M.B. ; Nagayev, K.A. ; Timoshenkova, O.R. ; Tkachenko, Svetlana I.
Author_Institution
Inst. of Electrophys., Yekaterinburg, Russia
fYear
2013
fDate
16-21 June 2013
Firstpage
1
Lastpage
6
Abstract
We experimentally established the role of electrodynamic processes in plasma channel formation during the high-voltage source with voltage rise rate of about ~1 MV/ns discharge to the coaxial line containing an inter-electrode gap, which is either open-circuited or enclosed with 5 mm long microconductor. Using the Faraday cup (both being unscreened and shielded with 10 mm thick organic glass plate) the transversal current It was measured. We established that during first 50 ns It is defined by voltage variations in time and plasma channel volume charge variations, and on times exceeding 500 ns - by particles and plasma flows. The comparison of It waveforms, acquired in air open-circuited gap experiments with the Faraday cup either staying unscreened or being shielded, shows that the current, observed at long times-scale, is defined by the particles flow from the expanding plasma, resulting from the electric explosion of either whole wire or just its surface-layer.
Keywords
coaxial cables; discharges (electric); explosions; plasma flow; pulse generators; wires (electric); Faraday cup; air open-circuited gap; electric explosion; interelectrode gap; microconductor; open-ended gap; plasma channel formation; plasma channel volume charge variation; plasma flow; transversal current; vacuum axial line; voltage generator; voltage-rise-rate discharge; Capacitors; Current measurement; Discharges (electric); Generators; Nonhomogeneous media; Plasmas; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Pulsed Power Conference (PPC), 2013 19th IEEE
Conference_Location
San Francisco, CA
ISSN
2158-4915
Type
conf
DOI
10.1109/PPC.2013.6627424
Filename
6627424
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