Title :
Localisation of electrical-insulation- and partial-discharge failures of IGBT modules
Author :
Mitic, G. ; Lefranc, G.
Author_Institution :
Dept. of Corp. Technol., Siemens AG, Munich, Germany
Abstract :
The partial discharge (PD) and insulation resistance is very important in view of the increasing operating voltages of IGBT modules. Partial discharge spectroscopy showed that the PDs from metallisation edges and interfaces in silicone gel were the main sources of PD at high voltages. It also allows these types of PD to be clearly distinguished. As the PDs from interfaces in silicone gel increase strongly at high voltages, it is especially important for the silicone gel to adhere well to the ceramic
Keywords :
insulated gate bipolar transistors; insulation testing; partial discharge measurement; power bipolar transistors; semiconductor device measurement; semiconductor device testing; silicone insulation; spectroscopy; PD spectroscopy; ceramic adhesion; electrical insulation failures; insulation resistance; metallisation edges; operating voltages; partial discharge failures; power IGBT modules; silicone gel interfaces; Ceramics; Electric resistance; Insulated gate bipolar transistors; Insulation; Partial discharges; Pulse width modulation converters; Spectroscopy; Testing; Traction motors; Voltage;
Conference_Titel :
Industry Applications Conference, 1999. Thirty-Fourth IAS Annual Meeting. Conference Record of the 1999 IEEE
Conference_Location :
Phoenix, AZ
Print_ISBN :
0-7803-5589-X
DOI :
10.1109/IAS.1999.801691
