Recent progress in ferroelectirc memory technology

Author

Ishiwara, Hiroshi

Author_Institution

Interdisciplinary Graduate Sch. of Sci. & Eng., Tokyo Inst. of Technol.

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

713

Lastpage

716

Abstract

Recent progress in ferroelectric random access memory (FeRAM) technology is reviewed from viewpoints of materials, devices, and circuits. First, insulating and ferroelectric properties of pure and Mn-substituted BiFeO₃ thin films are discussed. It is shown that Mn substitution at the Fe site is effective in improving the breakdown characteristics of the films and obtaining saturated polarization vs electric field (P-E) hysteresis loops at room temperature. Then, memory characteristics of FET-type FeRAM are discussed. It is shown that on-and off-currents in a ferroelectric-gate FET can be retained over 30 days when a HfO₂ buffer layer is inserted between the ferroelectric film and Si substrate in the gate structure. Finally, recent progress in another FET-type memory, 1T2C-type FeRAM, is introduced, in which the operation characteristics of 1k-bit memory array are mainly discussed

Keywords

bismuth compounds; electric breakdown; ferroelectric storage; hafnium compounds; iron compounds; manganese; random-access storage; silicon; BiFeO₃; HfO₂; Mn; breakdown characteristics; electric field hysteresis loops; ferroelectric film; ferroelectric random access memory technology; saturated polarization; Electric breakdown; Ferroelectric films; Ferroelectric materials; Hysteresis; Insulation; Iron; Nonvolatile memory; Polarization; Random access memory; Thin film circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306466

Filename

4098214