Models and measurements of Hg/sub 1-x/Cd/sub x/Te heterojunction transistors

Heterojunction Hg1.,CdxTe (HCT) diodes fabricated by liquid phase epitaxy (LPE) are a key to ultrahigh performance Infrared Focal Planes [ll. The authors present for the first time the results of measurements of both heterojunction FETs and bipolar transistors fabricated using LPE. These offer benefits for low noise amplification. Breakthroughs in 11-VI Molecular Beam Epitaxy (MBE) now enable excellent control of layer width and doping. Simulations utilizing a program developed for IIVI heterojunction devices show that MBE-based HCT he terojun c ti on bi p ol ar transistors (HBTs) can be competitive with state-of-the-art silicon and 111-V HBTs at low temperatures.