Title :
Some solutions for writing current reduction and high density application of phase change memory
Author :
Lin, Yinyin ; Feng, Jie ; Cai, Yaifei ; Lv, Hangbing ; Liao, Feifei ; Liu, Xin ; Tang, Tingao ; Qiao, Baowei ; Lai, Yunfeng ; Zhang, Yi ; Cai, Bingchu ; Chen, Bomy
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai
Abstract :
High writing current is the bottle-neck of PCM application and efforts focus on merely materials doping to improve crystal resistivity, novel structure to decrease active area etc. Here some solutions of our group are shown, including Si doped GST, novel 2D and 3D memory cell structure and multistate storage
Keywords :
integrated memory circuits; phase change materials; 2D memory cell structure; 3D memory cell structure; Si; current reduction; high density application; high writing current; multistate storage; phase change memory; silicon doped GST; CMOS process; CMOS technology; Conductivity; Crystallization; Doping; Lithography; Microelectronics; Phase change materials; Phase change memory; Writing;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306468
