Title :
Endurance Characteristics of SuperFlash® Memory
Author :
Liu, Xian ; Markov, Viktor ; Kotov, Alexander ; Dang, Tho Ngoc ; Levi, Amitay ; Yue, Ian ; Wang, Andy ; Qian, Rodger
Author_Institution :
Silicon Storage Technol. Inc., Sunnyvale, CA
Abstract :
Program/erase endurance characteristics of split-gate SuperFlashreg memory cells are discussed. Various factors which affect memory endurance, including cycling data pattern, cycling frequency, temperature, erase retries, and technology scaling, are investigated. Superior data retention after endurance cycling is demonstrated
Keywords :
flash memories; SuperFlash memory; cycling data pattern; cycling frequency; data retention; endurance cycling; memory endurance; program/erase endurance characteristics; Channel hot electron injection; Electron traps; Filling; Flash memory; Frequency estimation; Silicon; Split gate flash memory cells; Temperature distribution; Testing; Tunneling;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306479
