Title :
Si-On-ONO (SOONO) Devices Realized on Bulk Si Wafers for Fully-Depleted SOI Transistor and 4-Bit Flash Memory Applications
Author :
Oh, Chang Woo ; Kim, Sung Hwan ; Choi, Yong Lack ; Kim, Na Young ; Hong, Sung In ; Bae, Hyun Jun ; Kim, Dong-Won ; Park, Donggun
Author_Institution :
R&D Center, Samsung Electron. Co., Yongin
Abstract :
We proposed and successfully demonstrated Si-on-ONO (SOONO) devices for fully depleted SOI transistor and 4 bit flash memory applications. In terms of HP transistor, SOONO MOSFETs showed good SCE immunity and high driving currents. In terms of a 4-bit flash memory, SOONO MOSFETs with ONO layers as their gate dielectrics showed clear 4-bit operation using the physically separated 4 storage nodes of double ONO layers
Keywords :
MOSFET; dielectric materials; flash memories; silicon-on-insulator; 4 bit; HP transistor; SCE immunity; SOONO MOSFET; Si-on-ONO devices; bulk Si wafers; flash memory; fully-depleted SOI transistor; gate dielectrics; short channel effects; silicon-on-insulator; CMOS process; Dielectrics; Fabrication; Flash memory; Germanium silicon alloys; MOSFETs; Oxidation; Silicon compounds; Silicon germanium; Transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306481
