Title :
A fast bitline capacitance evaluation method for designing ferroelectric random access memory
Author :
Wen, Xin-Yi ; Ren, Tian-Ling ; Jia, Ze ; Wei, Chao-Gang ; Xie, Dan ; Liu, Li-Tian ; Yu, Jun
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing
Abstract :
One major issue of designing ferroelectric random access memory is to ascertain the proper ferroelectric capacitor scales for predefined capacity and architecture. Prior to that, bitline capacitor should be calculated accurately. In this paper, the topology of parasite capacitance in a typical 2T2C reading operation is analyzed, and an applicable bitline capacitance evaluation method is proposed. Applying this method on the test chip with 2T2C configuration, optimized ferroelectric capacitance could be acquired
Keywords :
ferroelectric capacitors; ferroelectric storage; random-access storage; 2T2C reading operation; bitline capacitance evaluation; ferroelectric capacitor; ferroelectric random access memory; parasite capacitance; Capacitors; Design methodology; Ferroelectric materials; Nonvolatile memory; Parasitic capacitance; Polarization; Random access memory; Testing; Topology; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306483