DocumentCode
3466240
Title
A fast bitline capacitance evaluation method for designing ferroelectric random access memory
Author
Wen, Xin-Yi ; Ren, Tian-Ling ; Jia, Ze ; Wei, Chao-Gang ; Xie, Dan ; Liu, Li-Tian ; Yu, Jun
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing
fYear
2006
fDate
23-26 Oct. 2006
Firstpage
775
Lastpage
777
Abstract
One major issue of designing ferroelectric random access memory is to ascertain the proper ferroelectric capacitor scales for predefined capacity and architecture. Prior to that, bitline capacitor should be calculated accurately. In this paper, the topology of parasite capacitance in a typical 2T2C reading operation is analyzed, and an applicable bitline capacitance evaluation method is proposed. Applying this method on the test chip with 2T2C configuration, optimized ferroelectric capacitance could be acquired
Keywords
ferroelectric capacitors; ferroelectric storage; random-access storage; 2T2C reading operation; bitline capacitance evaluation; ferroelectric capacitor; ferroelectric random access memory; parasite capacitance; Capacitors; Design methodology; Ferroelectric materials; Nonvolatile memory; Parasitic capacitance; Polarization; Random access memory; Testing; Topology; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306483
Filename
4098231
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