• DocumentCode
    3466240
  • Title

    A fast bitline capacitance evaluation method for designing ferroelectric random access memory

  • Author

    Wen, Xin-Yi ; Ren, Tian-Ling ; Jia, Ze ; Wei, Chao-Gang ; Xie, Dan ; Liu, Li-Tian ; Yu, Jun

  • Author_Institution
    Inst. of Microelectron., Tsinghua Univ., Beijing
  • fYear
    2006
  • fDate
    23-26 Oct. 2006
  • Firstpage
    775
  • Lastpage
    777
  • Abstract
    One major issue of designing ferroelectric random access memory is to ascertain the proper ferroelectric capacitor scales for predefined capacity and architecture. Prior to that, bitline capacitor should be calculated accurately. In this paper, the topology of parasite capacitance in a typical 2T2C reading operation is analyzed, and an applicable bitline capacitance evaluation method is proposed. Applying this method on the test chip with 2T2C configuration, optimized ferroelectric capacitance could be acquired
  • Keywords
    ferroelectric capacitors; ferroelectric storage; random-access storage; 2T2C reading operation; bitline capacitance evaluation; ferroelectric capacitor; ferroelectric random access memory; parasite capacitance; Capacitors; Design methodology; Ferroelectric materials; Nonvolatile memory; Parasitic capacitance; Polarization; Random access memory; Testing; Topology; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0160-7
  • Electronic_ISBN
    1-4244-0161-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.2006.306483
  • Filename
    4098231