A Novel Multi-Channel Phase-Change Memory Cell for Multi-State Storage with High Controllability

Author

Yin, You ; Ohta, Kazuhiro ; Sone, Hayato ; Hosaka, Sumio

Author_Institution

Dept. of Nano-Material Syst., Gunma Univ.

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

778

Lastpage

780

Abstract

Lateral single-channel (SC) and multi-channel (MC) phase-change memory (PCM) cell structures are numerically analyzed for multi-state storage based on their temperature distributions and their programming characteristics. As studied by finite element modeling (FEM), shorter pulses lead to more gradual transition from the set to the reset state of these cells. Especially, for the MC-PCM cell with channels having different lengths, channels are sequentially melted with increasing pulse amplitude. Corresponding step-like programming characteristics of the cell indicate high performance for its application of multi-state storage

Keywords

finite element analysis; phase changing circuits; random-access storage; finite element modeling; multistate storage; phase-change memory cell; pulse amplitude; temperature distributions; Conductivity; Controllability; Crystallization; Design optimization; Finite element methods; Heat transfer; Lead; Phase change materials; Phase change memory; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306484

Filename

4098232