Title :
Novel HfAIO charge trapping layer in SONOS type flash memory for multi-bit per cell operation
Author :
Zhang, Gang ; Yoo, Won Jong
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore
Abstract :
A HfAlO charge storage layer in SONOS (polysilicon-oxide-silicon nitride-oxide-silicon) type memory for multi-bit per cell operation by channel hot electron injection (CHEI) programming and hot hole injection (HHI) erase with a SiO2/HfAlO/SiO2 structure is proposed. Compared to conventional NROM, HfAlO shows the advantages of high speed program/erase of HfO2 as well as good charge retention and high crystallization temperature of Al2O3 , which makes HfAlO a very promising candidate for the charge storage layer. Excellent 2-bit per cell property with good 10-year charge retention is demonstrated from the charge retention tests, as well as the programming/erasing operations
Keywords :
aluminium compounds; flash memories; hafnium compounds; read-only storage; silicon compounds; Al2O3; HfAlO-SiO2; NROM; SONOS type flash memory; channel hot electron injection programming; charge retention; charge storage layer; charge trapping; hot hole injection; multi-bit per cell operation; Annealing; Channel hot electron injection; Crystallization; Flash memory; High K dielectric materials; High-K gate dielectrics; Hot carriers; Laboratories; SONOS devices; Temperature;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306485
