Author :
Li, Yan ; Lee, Seungpil ; Fong, Yupin ; Pan, Feng ; Tien-Chien Kuo ; Park, Jong ; Samaddar, Tapan ; Nguyen, Hao ; Mui, Man ; Htoo, Khin ; Kamei, Teruhiko ; Higashitani, Masaaki ; Yero, Emilio ; Kwon, Gyuwan ; Kliza, Phil ; Wan, Jun ; Kaneko, Tetsuya ; Mae
Abstract :
We present an 8 MB/s 3-bit per cell (D3) NAND flash memory that uses the same number of ECC bytes as 2-bit per cell (D2) NAND. Since no extra columns are added in D3 devices, the 16 Gb D3 chip in this paper achieves 0.112 Gb/mm2 compared to 0.079 Gb/mm2 on D2 chips, as previously reported (K. Takeuchi et al.,2006). This is a 41% improvement in Gb/mm2 and a 20% gain in overall die-size.
Keywords :
NAND circuits; flash memories; NAND flash memory; memory arrays; memory size 16 GByte; sense amplifiers; size 56 nm; word length 3 bit; write rate performance; Atherosclerosis; Circuit noise; Clocks; Decoding; Noise reduction; Nonvolatile memory; Resistors; Routing; Variable structure systems; Voltage;
