• DocumentCode
    3466315
  • Title

    A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate

  • Author

    Li, Yan ; Lee, Seungpil ; Fong, Yupin ; Pan, Feng ; Tien-Chien Kuo ; Park, Jong ; Samaddar, Tapan ; Nguyen, Hao ; Mui, Man ; Htoo, Khin ; Kamei, Teruhiko ; Higashitani, Masaaki ; Yero, Emilio ; Kwon, Gyuwan ; Kliza, Phil ; Wan, Jun ; Kaneko, Tetsuya ; Mae

  • Author_Institution
    SanDisk, Milpitas, CA
  • fYear
    2008
  • fDate
    3-7 Feb. 2008
  • Firstpage
    506
  • Lastpage
    632
  • Abstract
    We present an 8 MB/s 3-bit per cell (D3) NAND flash memory that uses the same number of ECC bytes as 2-bit per cell (D2) NAND. Since no extra columns are added in D3 devices, the 16 Gb D3 chip in this paper achieves 0.112 Gb/mm2 compared to 0.079 Gb/mm2 on D2 chips, as previously reported (K. Takeuchi et al.,2006). This is a 41% improvement in Gb/mm2 and a 20% gain in overall die-size.
  • Keywords
    NAND circuits; flash memories; NAND flash memory; memory arrays; memory size 16 GByte; sense amplifiers; size 56 nm; word length 3 bit; write rate performance; Atherosclerosis; Circuit noise; Clocks; Decoding; Noise reduction; Nonvolatile memory; Resistors; Routing; Variable structure systems; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    978-1-4244-2010-0
  • Electronic_ISBN
    978-1-4244-2011-7
  • Type

    conf

  • DOI
    10.1109/ISSCC.2008.4523279
  • Filename
    4523279
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3466315