DocumentCode :
3466345
Title :
DRAM to NAND-Diversification in the Memory Market
Author :
Chang, Xu ; MacGillivray, Geoffrey ; Scansen, Don ; Dorofeev, Alexandre ; Ho, Vu
Author_Institution :
Semicond. Insights Inc., Kanata, Ont.
fYear :
2006
fDate :
23-26 Oct. 2006
Firstpage :
796
Lastpage :
798
Abstract :
NAND flash had phenomenal growth in 2005. DRAM makers investing in NAND production were rewarded with large profits. 90nm and beyond leading-edge NAND flash memories are evaluated in this paper with their processes compared to the same manufacturer´s advanced DRAM processes, intending to address the technical benefits for a DRAM maker during its transition to NAND flash production. The technology, manufacturing, and intellectual property barriers for DRAM maker´s diversifying into NAND market are also discussed
Keywords :
DRAM chips; NAND circuits; flash memories; industrial property; DRAM cell; NAND flash memories; intellectual property; Consumer electronics; Intellectual property; Isolation technology; Manufacturing processes; Marketing and sales; Nonvolatile memory; Production; Pulp manufacturing; Random access memory; Space technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
Type :
conf
DOI :
10.1109/ICSICT.2006.306510
Filename :
4098237
Link To Document :
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