Title :
Device Tunnel Parameters for CoFe/Al-O/CoFe 1T1MTJ MRAM
Author :
Li, Simon C. ; Lee, J.M. ; Su, J.P. ; Wu, Te-Ho
Author_Institution :
Graduate Inst. of Commun. Eng., National Univ. of Tainan
Abstract :
Dielectric tunnel device parameters of CoFe/Al-O/CoFe MTJ of MRAM cell are measured and analyzed. General mathematical derivations for dielectric tunnel parameters in bright and dark region of MTJ cell are derived. The symmetry variation of dielectric tunnel charge in dark region of MTJ demonstrates a good balanced charge-conserved ferromagnetic plate capacitor. Parameters extraction and equivalent circuit model of dielectric tunnel capacitance C and resistance R from current-voltage curves for data 0 and 1 during 1T1MTJ read mode are proposed and demonstrated
Keywords :
aluminium compounds; cobalt compounds; equivalent circuits; magnetic storage; magnetic tunnelling; random-access storage; CoFe-Al-O; dark region; dielectric tunnel charge; equivalent circuit; ferromagnetic plate capacitor; magnetic RAM; magnetic tunnel junctions; Atomic force microscopy; Atomic measurements; Capacitance; Capacitors; Current measurement; Dielectric measurements; Electrical resistance measurement; Force measurement; Magnetic tunneling; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306512
