Title :
Improved Program Mode for Memory Array Based on Ferroelectric-Gate Field-Effect Transistor
Author :
Li, W.F. ; Kang, J.F. ; Liu, X.Y. ; Du, G. ; Han, R.Q. ; Wang, Y.Y. ; Ma, T.P.
Author_Institution :
Shenzhen Graduate Sch., Peking Univ., Shenzhen
Abstract :
An improved program mode for memory array based on ferroelectric field effect transistor (Fe-FET) is proposed. A SPICE macro-model for the transfer characteristics of Fe-FET devices, based on the Schmitt trigger circuit, is demonstrated and applied to circuit simulation. The simulation results show that, compared to the conventional program mode, the improved program mode can effectively reduce the requirements for the performance of Fe-FET, and consequently enhance the operation robustness of the Fe-FET based memory array circuit, as well as extend the design window
Keywords :
SPICE; circuit simulation; field effect transistors; integrated memory circuits; trigger circuits; SPICE macro-model; Schmitt trigger circuit; ferroelectric-gate field-effect transistor; memory array; program mode; transfer characteristics; Circuit simulation; FETs; Ferroelectric materials; Microelectronics; Nanotechnology; Nonvolatile memory; SPICE; Threshold voltage; Trigger circuits; Voltage control;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306515
