Title :
Thin Films of Layered-Structure (1-x)SrBi2Ta2O9-xBi3TiTaO9 Solid solution for Ferroelectric Random Access Memory Devices
Author :
Xie, Dan ; Zhang, Zhigang ; Ren, Tianling ; Liu, Litian
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing
Abstract :
{0.75SrBi2Ta2O9-0.25Bi3 TiTaO9} (SBT-BTT) thin films have been prepared by using the modified metalorganic solution deposition (MOSD) technique. The microstructure and ferroelectric properties of SBT-BTT thin films were studied. The SBT-BTT thin films were produced at 750degC . The surface morphology of SBT-BTT thin films showed more uniform grain distribution. The grain size and surface roughness of SBT-BTT films showed significant enhancement with an increase in annealing temperature. It is found that SBT-BTT thin films have good ferroelectric property. The measured remanent polarization values (2Pr) for SBT-BTT, SBT and BTT capacitors were 15muC/cm2, 7.5muC/cm2 and 4.8muC/cm2, respectively. The coercive field (Ec) for SBT-BTT capacitors was 50kV/cm. More importantly, the polarization of SBT-BTT capacitors only decreased 5% after 1011 switching cycles at a frequency of 1MHz. The improved microstructural and ferroelectric properties of SBT-BTT thin films compared to SBT suggested the possibility for ferroelectric devices applications
Keywords :
barium compounds; coercive force; ferroelectric storage; ferroelectric thin films; grain size; random-access storage; strontium compounds; surface morphology; surface roughness; titanium compounds; 1 MHz; SrBi2Ta2O9-Bi3TiTaO 9; coercive field; ferroelectric properties; ferroelectric random access memory; grain size; metalorganic solution deposition; surface morphology; surface roughness; thin films; Capacitors; Ferroelectric materials; Random access memory; Rough surfaces; Solids; Sputtering; Surface morphology; Surface roughness; Thin film devices; Transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306516
