Title :
A novel design of 0.25μm2.5 V 2T-2C sensing scheme for FeRAM
Author :
Ming-Hua Tang ; Yi-Chun Zhou ; Xue-Jun Zheng ; Zong-ting Guo ; Chuan-Pin Cheng ; Zhi Ye ; Zen-Shun Hu
Author_Institution :
Fac. of Mater. & Optoelectr. Phys., Xiangtan Univ., Hunan
Abstract :
A novel design of 0.25 μm 2.5V 2T-2C sensing scheme for FeRAM is proposed. The proposed scheme converts the voltage signals between the two bit lines to current signals and compares them using the current-sensing amplifier to realize magnify the read-out signals of 2T-2C FeRAM. The simulation of PSPICE shows that the new sensing scheme is more suitable for low voltage supply applications and the sensing speed is improved.
Keywords :
SPICE; amplifiers; ferroelectric storage; random-access storage; 0.25 micron; 2.5 V; 2T-2C FeRAM; PSPICE simulation; current-sensing amplifier; ferroelectric random access memory; read-out signals; Capacitors; Circuits; Energy consumption; Ferroelectric films; Ferroelectric materials; Information retrieval; Low voltage; Nonvolatile memory; Random access memory; SPICE;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
DOI :
10.1109/ICSICT.2006.306517
