Simulation of Program Characteristics of Nanocrystal Flash Memory Devices

Author

He, Jin ; Zhang, Zhigang ; Pan, Liyang ; Wang, Liudi ; He, Yang ; Li, Wei ; Zhu, Jun

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing

fYear

2006

fDate

Oct. 2006

Firstpage

830

Lastpage

832

Abstract

The authors present a simulation model for nanocrystal flash memories and show the simulation results obtained. The two softwares Athena and Atlas were used to construct a model for the MOSFET structure with nanocrystals. The programming transient process has been simulated with Id -Vg curves before and after programming and the threshold voltage shift have been figured out. The shift of threshold voltage increases with programming voltage, program time and the nanocrystal density. Different materials used as nanocrystals are also compared. The influence of distribution of nanocrystals has been investigated

Keywords

MOSFET; flash memories; nanostructured materials; Athena software; Atlas software; MOSFET structure; nanocrystal density; nanocrystal flash memory devices; program time; programming voltage; threshold voltage shift; Flash memory; Helium; Leakage current; MOSFET circuits; Microelectronics; Nanocrystals; Nonvolatile memory; Silicon; Threshold voltage; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306521

Filename

4098248