Title :
Simulation of Program Characteristics of Nanocrystal Flash Memory Devices
Author :
He, Jin ; Zhang, Zhigang ; Pan, Liyang ; Wang, Liudi ; He, Yang ; Li, Wei ; Zhu, Jun
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing
Abstract :
The authors present a simulation model for nanocrystal flash memories and show the simulation results obtained. The two softwares Athena and Atlas were used to construct a model for the MOSFET structure with nanocrystals. The programming transient process has been simulated with Id -Vg curves before and after programming and the threshold voltage shift have been figured out. The shift of threshold voltage increases with programming voltage, program time and the nanocrystal density. Different materials used as nanocrystals are also compared. The influence of distribution of nanocrystals has been investigated
Keywords :
MOSFET; flash memories; nanostructured materials; Athena software; Atlas software; MOSFET structure; nanocrystal density; nanocrystal flash memory devices; program time; programming voltage; threshold voltage shift; Flash memory; Helium; Leakage current; MOSFET circuits; Microelectronics; Nanocrystals; Nonvolatile memory; Silicon; Threshold voltage; Voltage control;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306521
