Title :
Digital Detection of Oxide Breakdown and Life-Time Extension in Submicron CMOS Technology
Author :
Acar, Mustafa ; Annema, Anne-Johan ; Nauta, Bram
Author_Institution :
Univ. of Twente, Enschede
Abstract :
An approach is introduced to extend the lifetime of high-voltage analog circuits in CMOS technologies based on redundancy, like that known for DRAMS. A large power transistor is segmented into N smaller ones in parallel. If a sub-transistor is broken, it is removed automatically from the compound transistor. The principle is demonstrated in an RF CMOS power amplifier (PA) in standard 1.2 V 90 nm CMOS.
Keywords :
CMOS analogue integrated circuits; electric breakdown; power amplifiers; power integrated circuits; power transistors; radiofrequency integrated circuits; RF CMOS power amplifier; compound transistor; digital detection; high-voltage analog circuits; life-time extension; oxide breakdown; power transistor; submicron CMOS technology; Breakdown voltage; CMOS technology; Circuits; Degradation; Electric breakdown; Power system harmonics; Power system simulation; Power transistors; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2010-0
Electronic_ISBN :
978-1-4244-2011-7
DOI :
10.1109/ISSCC.2008.4523291
