Title :
Liquid Phase Oxidation on GaAs-based Transistor Applications
Author :
Wang, Yeong-Her ; Lee, Kuan-Wei
Author_Institution :
Dept. of Electr. Eng., National Cheng-Kung Univ., Tainan
Abstract :
The GaAs-based MOS-HEMT with oxide as the gate dielectric and HBTs with surface passivation prepared by liquid phase oxidation has been successfully demonstrated. As compared to its counterpart HEMTs, the larger gate swing voltages, lower gate leakage currents, and higher breakdown voltages make the proposed technique suitable for power device applications. Moreover, the HBTs with oxide passivation possess the characteristics of lower surface recombination currents, higher breakdown voltage, and improved higher dc current gain
Keywords :
III-V semiconductors; MOSFET; gallium arsenide; heterojunction bipolar transistors; high electron mobility transistors; oxidation; passivation; semiconductor device breakdown; GaAs; GaAs-based MOS-HEMT; GaAs-based transistor; HBT; breakdown voltages; gate dielectric; gate leakage currents; gate swing voltages; heterojunction bipolar transistors; high electron mobility transistors; liquid phase oxidation; oxide passivation; surface passivation; surface recombination currents; Gallium arsenide; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; Leakage current; MODFETs; Oxidation; Passivation; Surface treatment;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306527
