Title :
Effect of Source-Connected Field Plate on Electric Field Distribution and Breakdown Voltage in AlGaN/GaN HEMTs
Author :
Lu, Sheng-Hui ; Zhou, Wei ; Yan, Di ; Xia, Jian-Xin ; Yang, Mo-hua
Author_Institution :
Sch. of Microelectron. & Solid-state Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu
Abstract :
Electric field distribution in the channel and breakdown characteristics of an AlGaN/GaN HEMT with a source-connected field plate (SC-FP) were investigated using a two-dimensional device simulation. The analysis of electric field distribution and breakdown voltage varying with the changes of the insulator thickness t and the field plate length LFP revealed that to maximize the breakdown voltage, t has to be increased to make the peak electric field at drain side of gate edge approaching breakdown electric field and LFP be long enough to prevent the high-field region at gate edge and that nearby FP edge from overlapping. For the simulated device, optimum t is about 0.2mum and LFP around 2.2mum, from which a breakdown voltage 365V was obtained
Keywords :
high electron mobility transistors; semiconductor device models; 2D device simulation; 365 V; AlGaN-GaN; HEMT; breakdown voltage; electric field distribution; source connected field plate; Aluminum gallium nitride; Breakdown voltage; Electric breakdown; Electrodes; Electron mobility; Gallium nitride; HEMTs; MODFETs; Polarization; Semiconductor process modeling;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306552
