Visible blind p+/p/n-/n+ UV 4H-SiC photodiodes based on 4H-SiC homoepilayers

Author

Liu, Xingfang ; Li, Jinmin ; Sun, Guosheng ; Ning, Jin ; Zhao, Yongmei ; Li, Jiaye ; Luo, Muchang ; Zeng, Yiping

Author_Institution

Novel Semicond. Material Lab., Chinese Acad. of Sci., Beijing

fYear

2006

fDate

Oct. 2006

Firstpage

866

Lastpage

868

Abstract

The p⁺/p^-/n^-/n⁺ structure ultraviolet 4H-SiC photodiodes with different sizes of active areas have been fabricated and characterized by the I-V characteristics and photoresponse spectra. The statistical leakage current was around 10 ^-11nA at zero bias and it was less than 10^-9 A at -5 V obtained from the 100 times 100 mum² size samples. The photoresponse spectra, measured at different biases, showed high detectivity at ultraviolet range of 330-360nm, which means that the photodiodes have excellent performance in the detection of the solar ultraviolet light

Keywords

leakage currents; photodiodes; silicon compounds; wide band gap semiconductors; 330 to 360 nm; 4H-SiC homoepilayers; 4H-SiC photodiodes; I-V characteristics; SiC; photoresponse spectra; solar ultraviolet light; statistical leakage current; visible blind p⁺/p^-/n^-/n⁺ UV; Blindness; Fabrication; Laboratories; Leakage current; Ohmic contacts; Photodetectors; Photodiodes; Platinum; Semiconductor materials; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306554

Filename

4098259