Title :
Visible blind p+/p/n-/n+ UV 4H-SiC photodiodes based on 4H-SiC homoepilayers
Author :
Liu, Xingfang ; Li, Jinmin ; Sun, Guosheng ; Ning, Jin ; Zhao, Yongmei ; Li, Jiaye ; Luo, Muchang ; Zeng, Yiping
Author_Institution :
Novel Semicond. Material Lab., Chinese Acad. of Sci., Beijing
Abstract :
The p+/p-/n-/n+ structure ultraviolet 4H-SiC photodiodes with different sizes of active areas have been fabricated and characterized by the I-V characteristics and photoresponse spectra. The statistical leakage current was around 10 -11nA at zero bias and it was less than 10-9 A at -5 V obtained from the 100 times 100 mum2 size samples. The photoresponse spectra, measured at different biases, showed high detectivity at ultraviolet range of 330-360nm, which means that the photodiodes have excellent performance in the detection of the solar ultraviolet light
Keywords :
leakage currents; photodiodes; silicon compounds; wide band gap semiconductors; 330 to 360 nm; 4H-SiC homoepilayers; 4H-SiC photodiodes; I-V characteristics; SiC; photoresponse spectra; solar ultraviolet light; statistical leakage current; visible blind p+/p-/n-/n+ UV; Blindness; Fabrication; Laboratories; Leakage current; Ohmic contacts; Photodetectors; Photodiodes; Platinum; Semiconductor materials; Temperature measurement;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306554
