DocumentCode :
3466823
Title :
178GHz InP/InGaAs HBT with /spl mu/-bridge
Author :
Yu, Jinyong ; Liu, Xinyu ; Su, Shubing ; Wang, Runmei ; Xu, Anhuai ; Qi, Ming
Author_Institution :
Inst. of Microelectron., CAS, Beijing
fYear :
2006
fDate :
23-26 Oct. 2006
Firstpage :
872
Lastpage :
874
Abstract :
An InP-based single-heterojunction bipolar transistor (SHBT) with base mu-bridge and emitter air-bridge is reported in this paper. Because those bridges reduce parasite greatly, cutoff frequency fT of the 2 times 12.5 mum2 InP SHBT without de-embedding reaches 178GHz. Such device can output more power than traditional structure HBT with the same fT because of wider emitter. And it is critical to support high-speed low to medium power applications, such as OEIC receivers and analog-to-digital converters
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; 178 GHz; HBT; InP-InGaAs; emitter air-bridge; mu-bridge; single-heterojunction bipolar transistor; Bridge circuits; Capacitors; Content addressable storage; Electrodes; Fabrication; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Parasitic capacitance; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
Type :
conf
DOI :
10.1109/ICSICT.2006.306556
Filename :
4098261
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3466823
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