3-Level power converter with high-voltage hybrid pairs of SiC-PiN diode and IEGT

Author

Kanai, Takeo ; Takao, Kazuto ; Shinohe, Takashi ; Tanaka, Yasunori ; Yamaguchi, Hiroshi ; Ohashi, Hiromichi ; Akiyama, Hironobu ; Sung, Kyungmin ; Wada, Keiji

Author_Institution

Toshiba Mitsubishi-Electr. Ind. Syst. Corp., Fuchu, Japan

fYear

2010

fDate

21-24 June 2010

Firstpage

3259

Lastpage

3265

Abstract

High-switching-frequency operation is essential for reducing the size and weight of LC filters in medium-voltage power converters. In this work, hybrid pairs of 6 kV SiC-PiN diodes and 4.5 kV Si-IEGTs have been applied to realize the high-switching-frequency operation. A gate-driving technique with an extremely low gate resistance called hard gate driving is employed for low switching losses of the hybrid pair. 100 A class hybrid pair modules are fabricated and their high-speed switching characteristics have been evaluated. By using the developed hybrid pair module, high switching frequency operation more than 2 kHz have been demonstrated in a prototype power converters.

Keywords

power convertors; power filters; power semiconductor diodes; silicon compounds; wide band gap semiconductors; LC filters; PiN diode and IEGT; SiC; current 100 A; gate-driving technique; high-speed switching; medium-voltage power converters; voltage 4.5 kV; voltage 6 kV; Degradation; Filters; Medium voltage; Power electronics; Semiconductor diodes; Stress; Switching converters; Switching frequency; Switching loss; Testing; IEGT; Medium-voltage power converter; PiN diode; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Conference (IPEC), 2010 International

Conference_Location

Sapporo

Print_ISBN

978-1-4244-5394-8

Type

conf

DOI

10.1109/IPEC.2010.5543707

Filename

5543707