DocumentCode
3466843
Title
Trends in CMOS technologies and radiation tolerant design
Author
Anelli, Giovanni
Volume
1
fYear
2000
fDate
2000
Abstract
CMOS technologies have undergone a tremendous evolution in the past decades. With each new technology generation a 30% improvement in performance has been obtained at constant cost. This progress makes processes obsolete quickly forcing us to continuously upgrade our designs. A short reminder of the operation of CMOS devices will be presented. After a brief overview of the effects of ionizing radiation and highly energetic particles on CMOS integrated circuits (IC), the influence of scaling will be discussed. In particular, scaling down the minimum dimensions of a technology not only improves the ultimate performance of the MOS transistor, but also alters the radiation response of CMOS ICs. Total dose effects are reduced but single event effects may be enhanced. Aspects of the influence of scaling on the design of circuits for high energy physics or medical applications will be discussed
Keywords
CMOS integrated circuits; dosimetry; nuclear electronics; radiation hardening (electronics); CMOS IC; CMOS integrated circuits; CMOS technologies; dose; high energy physics; ionizing radiation; medical; radiation response; radiation tolerance; scaling; single event effects; CMOS technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record, 2000 IEEE
Conference_Location
Lyon
ISSN
1082-3654
Print_ISBN
0-7803-6503-8
Type
conf
DOI
10.1109/NSSMIC.2000.948989
Filename
948989
Link To Document