• DocumentCode
    3466843
  • Title

    Trends in CMOS technologies and radiation tolerant design

  • Author

    Anelli, Giovanni

  • Volume
    1
  • fYear
    2000
  • fDate
    2000
  • Abstract
    CMOS technologies have undergone a tremendous evolution in the past decades. With each new technology generation a 30% improvement in performance has been obtained at constant cost. This progress makes processes obsolete quickly forcing us to continuously upgrade our designs. A short reminder of the operation of CMOS devices will be presented. After a brief overview of the effects of ionizing radiation and highly energetic particles on CMOS integrated circuits (IC), the influence of scaling will be discussed. In particular, scaling down the minimum dimensions of a technology not only improves the ultimate performance of the MOS transistor, but also alters the radiation response of CMOS ICs. Total dose effects are reduced but single event effects may be enhanced. Aspects of the influence of scaling on the design of circuits for high energy physics or medical applications will be discussed
  • Keywords
    CMOS integrated circuits; dosimetry; nuclear electronics; radiation hardening (electronics); CMOS IC; CMOS integrated circuits; CMOS technologies; dose; high energy physics; ionizing radiation; medical; radiation response; radiation tolerance; scaling; single event effects; CMOS technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record, 2000 IEEE
  • Conference_Location
    Lyon
  • ISSN
    1082-3654
  • Print_ISBN
    0-7803-6503-8
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2000.948989
  • Filename
    948989