Title :
Electrical properties of metamorphic In0.52Al0.48As/In0.65Ga0.35As HEMT´s on GaAs substrate
Author :
Qiu, Z.J. ; Liu, R. ; Zhang, S.L. ; Gui, Y.S. ; Cui, L.J. ; Zeng, Y.P. ; Chu, J.H.
Author_Institution :
Sch. of Microelectron., Fudan Univ., Shanghai
Abstract :
Variable magnetic field Hall measurements were performed to investigate the electrical properties in In0.52Al0.48 As/In0.65Ga0.35As metamorphic high electron mobility transistors (MMHEMTs) on GaAs substrate at the temperature range from 4 to 100 K. The Shubnikov-de Hass (SdH) measurement shows the two-dimensional electronic behavior and two-subband electron occupation in MMHEMTs. The electron densities and mobilities of the two subbands are obtained by fast Fourier transform analysis. Both the SdH oscillations and conventional Hall analysis are in good agreement in the determination of total electron density, which is about 2.1 times 10 12 cm-2 due to incomplete transfer of the electrons. The temperature dependence of the electron mobility indicates that at low temperature alloy scattering dominates, whereas at high temperature, the mobility is mainly limited by optical phonon scattering
Keywords :
III-V semiconductors; Shubnikov-de Haas effect; aluminium compounds; arsenic compounds; gallium arsenide; high electron mobility transistors; indium compounds; magnetic field measurement; 2D electronic behavior; In0.52Al0.48As-In0.65Ga0.35 As; Shubnikov-de Hass measurement; electrical properties; fast Fourier transform analysis; metamorphic HEMT; metamorphic high electron mobility transistors; two-subband electron occupation; variable magnetic field Hall measurements; Electric variables measurement; Electron mobility; Gallium arsenide; HEMTs; MODFETs; Magnetic field measurement; Magnetic properties; Optical scattering; Performance evaluation; Temperature dependence;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306557
