Title :
High-Temperature Characteristics of A Symmetrically-Graded InAlAs/InxGa1-xAs/GaAs MHEMT
Author :
Lee, Ching-Sung ; Hsu, Wei-Chou ; Su, Ker-Hua ; Huang, Jun-Chin ; Liao, Chen-Hsian
Author_Institution :
Dept. of Electron. Eng., Feng Chia Univ., Taichung
Abstract :
High-temperature characteristics of a symmetrically-graded delta-doped InAlAs/InxGa1-xAs/GaAs (x=0.5 rarr 0.65 rarr 0.5) metamorphic high electron mobility transistor (MHEMT) have been investigated. The thermal threshold coefficients, defined as deltaVth/deltaT, are superiorly low to be 0.9 mV/K from 300 K to 420 K and -0.75 mV/K from 420 K to 500 K, respectively. The present MHEMT device, with stabilized thermal threshold variations and superior high-temperature linearity characteristics, is promising for high-temperature integrated circuit (IC) applications
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; high-temperature electronics; indium compounds; 300 to 420 K; 420 to 500 K; InAlAs-InGaAs-GaAs; high-temperature characteristics; high-temperature integrated circuit applications; high-temperature linearity characteristics; metamorphic high electron mobility transistor; stabilized thermal threshold variations; symmetrically-graded MHEMT; thermal threshold coefficients; Application specific integrated circuits; Current density; Gallium arsenide; HEMTs; Indium compounds; MODFETs; Substrates; Temperature; Transconductance; mHEMTs;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306558
