High-Temperature Characteristics of A Symmetrically-Graded InAlAs/InxGa1-xAs/GaAs MHEMT

Author

Lee, Ching-Sung ; Hsu, Wei-Chou ; Su, Ker-Hua ; Huang, Jun-Chin ; Liao, Chen-Hsian

Author_Institution

Dept. of Electron. Eng., Feng Chia Univ., Taichung

fYear

2006

fDate

Oct. 2006

Firstpage

878

Lastpage

880

Abstract

High-temperature characteristics of a symmetrically-graded delta-doped InAlAs/In_xGa_1-xAs/GaAs (x=0.5 rarr 0.65 rarr 0.5) metamorphic high electron mobility transistor (MHEMT) have been investigated. The thermal threshold coefficients, defined as deltaV_th/deltaT, are superiorly low to be 0.9 mV/K from 300 K to 420 K and -0.75 mV/K from 420 K to 500 K, respectively. The present MHEMT device, with stabilized thermal threshold variations and superior high-temperature linearity characteristics, is promising for high-temperature integrated circuit (IC) applications

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; high-temperature electronics; indium compounds; 300 to 420 K; 420 to 500 K; InAlAs-InGaAs-GaAs; high-temperature characteristics; high-temperature integrated circuit applications; high-temperature linearity characteristics; metamorphic high electron mobility transistor; stabilized thermal threshold variations; symmetrically-graded MHEMT; thermal threshold coefficients; Application specific integrated circuits; Current density; Gallium arsenide; HEMTs; Indium compounds; MODFETs; Substrates; Temperature; Transconductance; mHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306558

Filename

4098263