Title :
SiC power devices for industrial applications
Author :
Friedrichs, Peter
Author_Institution :
SiCED Electron. Dev. GmbH & Co. KG, Erlangen, Germany
Abstract :
The contribution will comment on the role of silicon carbide based power semiconductor devices in industrial electronics with a focus on high power densities and improved efficiency. Starting with an introduction into the basic properties of silicon carbide semiconductors it will be sketched how these features can be favorably used in order to minimize volumes of electronic components and/or reduce losses in power electronic systems. Examples of successful use in applications will be presented, but also a critical consideration of the hurdles existing for a broader implementation of such components today will be given. Specific device concepts for diodes and transistors with their pro´s and cons will be discussed, but also not directly device related topics like packaging and cooling will be emphasized. After a short outlook into the future if high voltage components a short discussion about short time application scenarios for upcoming SiC power devices will be given.
Keywords :
power semiconductor devices; silicon compounds; SiC; SiC power devices; diodes; industrial electronics; power electronic systems; power semiconductor devices; silicon carbide; transistors; Costs; Industrial electronics; Insulated gate bipolar transistors; Packaging; Power electronics; Power semiconductor switches; Schottky diodes; Semiconductor diodes; Silicon carbide; Voltage; Power denisty; SBD´s; SiC semiconductors; VJFETs;
Conference_Titel :
Power Electronics Conference (IPEC), 2010 International
Conference_Location :
Sapporo
Print_ISBN :
978-1-4244-5394-8
DOI :
10.1109/IPEC.2010.5543711