Title :
8-Watt internally matched GaAs power amplifier at 16-16.5GHz
Author :
Zhong Shichang ; Chen Tangsheng ; Lin Gang ; Li Fuxiao
Author_Institution :
National Key Lab. of Monolithic Integrated Circuits & Modules, Nanjing
Abstract :
This paper describes a new 19.2mm GaAs PHEMT chip with high gain, high power and high power-added efficiency. Devices which are packaged by internal-matching use one such FET that has been developed at 16-16.5GHz. At 16.5GHz, the device has achieved power, gain, and power-added efficiency of 39.1dBm, 6.1dB and 26.1% respectively at the 1dB gain compression point. It is first reported that high gain, PAE and output power combination have achieved by a single FET power amplifier at such high frequency
Keywords :
HEMT integrated circuits; III-V semiconductors; field effect transistor circuits; gallium arsenide; microwave power amplifiers; 1 dB; 16 to 16.5 GHz; 19.2 mm; 8 W; FET power amplifier; GaAs; PHEMT chip; field effect transistor; internal-matching; internally matched power amplifier; Equivalent circuits; FETs; Frequency; Gallium arsenide; High power amplifiers; Impedance matching; PHEMTs; Packaging; Power amplifiers; Power generation;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306561
