NEW PHENOMENA IN NANOSTRUCTURES

Author

Shmavonyan, G. Sh

Author_Institution

Nanoelectronics & Nanotechnology Lab., State Eng. Univ. of Armenia, Yerevan

fYear

2006

fDate

Oct. 2006

Firstpage

890

Lastpage

892

Abstract

For semiconductor optical amplifiers fabricated on the substrate with multiple quantum wells, a very broad emission spectrum is obtained. The spectral width is nearly 400 nm (1200-1600 nm). Broadband characteristics allow observing three novel phenomena: (i) bi-directional guided effect of lasing mode in a bending waveguide of semiconductor optical amplifier; (ii) an optical switching effect in one semiconductor optical amplifier for optical communication band; and (iii) the effect of separate confinement heterostructure layer thickness

Keywords

optical switches; semiconductor optical amplifiers; semiconductor quantum wells; 1200 to 1600 nm; bending waveguide; bidirectional guided effect; broadband characteristics; confinement heterostructure layer thickness; emission spectrum; lasing mode; multiple quantum wells; nanostructures; optical communication band; optical switching effect; semiconductor optical amplifiers; spectral width; Bandwidth; Bidirectional control; Nanostructures; Optical design; Optical fiber communication; Optical waveguides; Semiconductor optical amplifiers; Semiconductor waveguides; Stimulated emission; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306562

Filename

4098267