Title :
NEW PHENOMENA IN NANOSTRUCTURES
Author :
Shmavonyan, G. Sh
Author_Institution :
Nanoelectronics & Nanotechnology Lab., State Eng. Univ. of Armenia, Yerevan
Abstract :
For semiconductor optical amplifiers fabricated on the substrate with multiple quantum wells, a very broad emission spectrum is obtained. The spectral width is nearly 400 nm (1200-1600 nm). Broadband characteristics allow observing three novel phenomena: (i) bi-directional guided effect of lasing mode in a bending waveguide of semiconductor optical amplifier; (ii) an optical switching effect in one semiconductor optical amplifier for optical communication band; and (iii) the effect of separate confinement heterostructure layer thickness
Keywords :
optical switches; semiconductor optical amplifiers; semiconductor quantum wells; 1200 to 1600 nm; bending waveguide; bidirectional guided effect; broadband characteristics; confinement heterostructure layer thickness; emission spectrum; lasing mode; multiple quantum wells; nanostructures; optical communication band; optical switching effect; semiconductor optical amplifiers; spectral width; Bandwidth; Bidirectional control; Nanostructures; Optical design; Optical fiber communication; Optical waveguides; Semiconductor optical amplifiers; Semiconductor waveguides; Stimulated emission; Substrates;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306562
