Title :
A CMOS Temperature-to-Digital Converter with an Inaccuracy of ± 0.5° C (3/spl sigma)from -55 to 125°C
Author :
van Vroonhoven, C.P.L. ; Makinwa, K.A.A.
Author_Institution :
Delft Univ. of Technol., Delft
Abstract :
This paper describes a CMOS temperature-to-digital converter (TDC) based on thermal diffusivity sensing, which is an interesting alternative to conventional band-gap temperature sensors because the thermal diffusivity of bulk silicon is insensitive to process spread. Compared to previous work of Makinwa, K.A.A., et al, (2006), this converter does not require off-chip analog components, operates over a wider temperature range and has a digital output. Furthermore, its output is a much more linear function of temperature. The TDC has an untrimmed device-to-device spread of plusmn0.5degC (3sigma) over the military temperature range (-55 to 125degC).
Keywords :
CMOS analogue integrated circuits; analogue-digital conversion; silicon; temperature sensors; thermal diffusivity; CMOS temperature-to-digital converter; band-gap temperature sensors; bulk silicon; device-to-device spread; off-chip analog components; thermal diffusivity sensing; Bandwidth; Capacitors; Crosstalk; Electronic packaging thermal management; Frequency; Preamplifiers; Solid state circuits; Temperature distribution; Temperature sensors; Thermal resistance;
Conference_Titel :
Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2010-0
Electronic_ISBN :
978-1-4244-2011-7
DOI :
10.1109/ISSCC.2008.4523314
