Effect of Passivation on Increasing of AlGaN/GaN HEMT Gate Reverse Leakage

Author

Chengzhan, Li ; Jian, Liu ; Xinyu, Liu ; Guoguo, Liu ; Dan, Liu ; Xiaojuan, Chen ; Zhijing, He

Author_Institution

Inst. of Microelectron., Chinese Acad. of Sci., Beijing

fYear

2006

fDate

Oct. 2006

Firstpage

908

Lastpage

910

Abstract

AlGaN/GaN HEMT gate leakage increasing induced by passivation was investigated by employing double gate surface leakage test structure, circle and rectangular Schottky contact structure and metal float gate structure. It was demonstrated that surface leakage is not a major contributor to increasing of gate leakage. Increase of gate leakage depends on augmenting of Schottky contact edge effect and inhibiting "visual gate" between gate and drain

Keywords

III-V semiconductors; Schottky barriers; aluminium compounds; gallium compounds; high electron mobility transistors; leakage currents; passivation; wide band gap semiconductors; AlGaN-GaN; HEMT gate reverse leakage; Schottky contact edge effect; Schottky contact structure; double gate surface leakage test structure; gate leakage; high electron mobility transistor; metal float gate structure; passivation; Aluminum gallium nitride; Gallium nitride; Gate leakage; Gold; HEMTs; Leakage current; Passivation; Schottky barriers; Substrates; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306568

Filename

4098273